Micron recently announced that the company has developed a new technology which allows them to place 16 gigabyte of DDR3-memory on a single module. It should also become possible to equip a server with up to nine of these modules, accounting for a total of 144 GB of memory. The so called load-reduced dual-inline memory modules (LRDIMM's) use Micron's 50 nm DDR3-memory chips with a capacity of 2 gigabit a piece. These chips operate at 1,35 V.
Micron reports that the term 'load reduced' means that the server memory will not stress the memory bus as much, allowing for higher data frequencies and capacities. This decreased load is achieved by using an Inphi iMB chip, or isolation memory buffer chip. Compared to the current registered DIMM's, Micron claims a stress-decrease of 50% for dual-rank LRDIMM's and even 75%^for quad-rank modules. Micron also mentions than an LRDIMM has 57% more bandwidth than an RDIMM.
At the moment, Micron is shipping samples of 8 GB LRDIMM-memory to its partners. It's expected that the mass production of 16 GB modules will start in 2010.
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